midium power transistors ( 50v / 3a) MP6Z13 ? structure ? dimensions (unit : mm) npn/pnp silicon epitaxial planar transistor ? features 1) low saturation voltage, typically v ce (sat) = 0.35v (max.) (i c / i b = 1a / 50ma) v ce (sat) = -0.40v (max.) (i c / i b = -1a / -50ma) 2) high speed switching ? applications ? inner circuit (unit : mm) package mpt6 code tr basic ordering unit (pieces) 1000 ? absolute maximum ratings (ta = 25 ? c) symbol limits unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6v dc i c 3a pulsed i cp 6a symbol limits unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -6 v dc i c -3 a pulsed i cp -6 a symbol limits unit p d 2.0 w/total p d 1.4 w/element junction temperature t j 150 ? c range of storage temperature t stg -55 to 150 ? c *1 pw=10ms, single pulse *2 mounted on a 40 x 40 x 0.7[mm] ceramic board. low frequency amplifier driver ? packaging specifications type parameter collector current power dissipation parameter collector current parameter *1 *2 *2 *1 mpt6 (dual) (1) (2) (3) (6) (5) (4) (1) tr.1 emitter (2) tr.1 base (3) tr.2 collector (4) tr.2 emitter (5) tr.2 base (6) tr.1 collector (1) tr.1 emitter (2) tr.1 base (3) tr.2 collector (4) tr.2 emitter (5) tr.2 base (6) tr.1 collector (1) (2) (3) (4) (5) (6) tr.1 tr.2 1/7 2011.02 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
MP6Z13 ? electrical characteristics (ta = 25 c) symbol min. typ. max. unit collector-emitter breakdown voltage bv ceo 50 - - v i c = 1ma collector-base breakdown voltage bv cbo 50 - - v i c = 100a emitter-base breakdown voltage bv ebo 6--v i e = 100a collector cut-off current i cbo --1 p a v cb = 50v emitter cut-off current i ebo --1 p a v eb = 4v collector-emitter staturation voltage v ce(sat) - 130 350 mv i c = 1a, i b = 50ma dc current gain h fe 180 - 450 - v ce = 3v, i c = 50ma turn-on time t on -50-ns storage time t stg - 450 - ns fall time t f -80-ns *1 pulsed *2 see switching time test circuit symbol min. typ. max. unit collector-emitter breakdown voltage bv ceo -50 - - v i c = -1ma collector-base breakdown voltage bv cbo -50 - - v i c = -100a emitter-base breakdown voltage bv ebo -6 - - v i e = -100a collector cut-off current i cbo ---1 p a v cb = -50v emitter cut-off current i ebo ---1 p a v eb = -4v collector-emitter staturation voltage v ce(sat) - -200 -400 mv i c = -1a, i b = -50ma dc current gain h fe 180 - 450 - v ce = -3v, i c = -50ma turn-on time t on -45-ns storage time t stg - 250 - ns fall time t f -35-ns *1 pulsed *2 see switching time test circuit i c = -1.5a, i b1 = -150ma, i b2 =150ma, v cc -10v mhz v ce = -10v i e =500ma, f=100mhz collector output capacitance c ob -24-pf v cb = -10v, i e =0a f=1mhz - 13 collector output capacitance c ob parameter transition frequency f t - 300 - conditions pf v cb = 10v, i e =0a f=1mhz - i c = 1.5a, i b1 = 150ma, i b2 =-150ma, v cc 10v conditions parameter mhz 320 - v ce = 10v i e =-500ma, f=100mhz transition frequency f t - *2 *2 *2 ~ _ *1 *1 *2 *2 *2 ~ _ *1 *1 2/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z13 ? electrical characteristic curves (ta=25 ? c) tr.1 0.0 0.1 0.2 0.3 0.4 0.5 0 0.5 1 1.5 2 colector to emitter voltage :v ce [v] fig.1 typical output characteristics 2.5ma 2.0ma 1.5ma 1.0ma i b =0.5ma 3.0ma 5ma ta=25 c collector current : i c [a] 10 100 1000 1 10 100 1000 10000 dc current gain : h fe collector current : i c [ma] fig.2 dc current gain vs. collector current ( i ) v ce =5v 3v ta=25 c 10 100 1000 1 10 100 1000 10000 dc current gain : h fe collector current : i c [ma] fig3. dc current gain vs. collector current ( ii ) v ce =3v ta=125 c 75 c 25 c - 40 c 0.001 0.01 0.1 1 1 10 100 1000 10000 collector saturation voltage : v ce (sat)[v] collector current : i c [ma] fig.4 collector - emitter saturation voltage vs. collector current ( i ) ta=25 c i c /i b =50 20 10 0.001 0.01 0.1 1 1 10 100 1000 10000 collector saturation voltage : v ce (sat)[v] collector current : i c [ma] i c /i b =20 fig.5 collector - emitter saturation voltage vs. collector current ( ii ) ta=125 c 75 c 25 c - 40 c 1 10 100 1000 10000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 collector current : i c [ma] base to emitter voltage : v be [v] fig.6 ground emitter propagation characteristics v ce =3v ta=125 c 75 c 25 c - 40 c 3/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z13 1 10 100 1000 0.1 1 10 100 collector output capacitance : cob(pf) e mitter input capacitance : cib(pf) collector - base voltage : v cb (v) emitter - base voltage : v eb (v) fig.7 emitter input capacitance vs. emitter - base voltage c ollector output capacitance vs. collector - base voltage ta=25 c f=1mhz i e =0a i c =0a cob cib 10 100 1000 10 100 1000 transition frequency : f t [mhz] emitter current : i e [ma] fig.8 gain bandwidthproduct vs. emitter current ta=25 c v ce =10v 0.001 0.01 0.1 1 10 0.1 1 10 100 collector current : i c [a] collector to emitter voltage : v ce [v] fig.9 safe operating area ta=25 c when one element operated single non repetitive pulse dc (mounted on a ceramic board) 100ms 10ms 1ms 4/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z13 tr.2 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 -2 -1.5 -1 -0.5 0 collector current : i c [a] colector to emitter voltage : v ce [v] fig.1 typical output characteristics - 2.5ma - 2.0ma - 1.5ma - 1.0ma i b = - 0.5ma - 3.0ma - 5.0ma - 4.0ma 10 100 1000 -1 -10 -100 -1000 -10000 dc current gain : h fe collector current : i c [ma] fig.2 dc current gain vs. collector current ( i ) ta=25 c v ce = - 5v - 3v 10 100 1000 -1 -10 -100 -1000 -10000 dc current gain : h fe collector current : i c [ma] fig.3 dc current gain vs. collector current ( ii ) v ce = - 3v ta=125 c 75 c 25 c - 40 c -0.001 -0.01 -0.1 -1 -1 -10 -100 -1000 -10000 collector saturation voltage : v ce (sat)[v] collector current : i c [ma] ta=25 c i c /i b =50 20 10 fig.4 collector - emitter saturation voltage vs. collector current ( i ) -0.001 -0.01 -0.1 -1 -1 -10 -100 -1000 -10000 collector saturation voltage : v ce (sat)[v] collector current : i c [ma] i c /i b =20 fig.5 collector - emitter saturation voltage vs. collector current ( ii ) ta=125 c 75 c 25 c - 40 c -1 -10 -100 -1000 -10000 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 collector current : i c [ma] base to emitter voltage : v be [v] v ce = - 3v fig.6 ground emitter propagation characteristics ta=125 c 75 c 25 c - 40 c 5/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z13 1 10 100 1000 -0.1 -1 -10 -100 collector output capacitance : cob(pf) emitter input capacitance : cib(pf) collector - base voltage : v cb [v] emitter - base voltage : v eb [v] ta=25 c f=1mhz i e =0a i c =0a cob cib fig.7 emitter input capacitance vs. emitter - base voltage collector output capacitance vs. collector - base voltage 10 100 1000 10 100 1000 transition frequency : f t [mhz] emitter current : i e [ma] fig.8 gain bandwidth product vs. emitter current ta=25 c v ce = - 10v -0.001 -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 collector current : i c [a] collector to emitter voltage : v ce [v] fig.9 safe operating area ta=25 c when one element operated single non repetitive pulse dc (mounted on a ceramic board) 100ms 10ms 1ms 6/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6Z13 ? switching time test circuit v in p w pw 50 s duty cycle Q1% t stg i b1 i b2 90% 10% t on t f i c i b1 i b2 i c v cc 10v ~ _ ~ _ base current waveform collector current waveform r l =6.8? i b2 i b1 90% 10% t stg t on t f i c v in pw pw 50 s duty cycle Q1% i b1 i b2 i c ~ _ base current waveform v cc -10v ~ _ collector current waveform r l =6.8? 7/7 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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